STO Single Crystal Substrate (Purity: >99.9%, Size:10*10*0.5mm)

STO Single Crystal Substrate

STO single crystal substrate is a widely used single crystal substrate in materials science and semiconductor technology. Its unique properties make it an ideal platform for the epitaxial growth of thin films and the fabrication of advanced electronic and photonic devices.

Key Properties of STO

Crystal Structure: STO crystallizes in a cubic perovskite structure, which allows for excellent lattice matching with various oxide materials.

Lattice Parameters: The lattice constant of STO is approximately 3.905 Å, facilitating compatibility with many transition metal oxides.

Dielectric Constant: STO has a high dielectric constant (around 300 at room temperature), making it valuable for capacitive applications.

Ferroelectric Behavior: Below 105 K, STO exhibits ferroelectric properties, which can be exploited in memory devices and sensors.

Band Gap: The band gap of STO is around 3.2 eV, suitable for optoelectronic applications.

Thermal Stability: STO is thermally stable, allowing for high-temperature processing during film deposition.

Applications of STO as a Substrate

Thin Film Growth: STO serves as an excellent substrate for growing high-quality thin films of various materials, including:

High-temperature superconductors (e.g., YBCO)

Oxide semiconductors

Magnetic thin films

Heterostructures: It supports the fabrication of complex oxide heterostructures, which are important for devices like:

Topological insulators

Oxide-based transistors

Electronic Devices: STO substrates are used in the development of advanced electronic components, such as:

Capacitors

Field-effect transistors (FETs)

Photonic Devices: Due to its optical transparency, STO is used in photonic applications, including:

Waveguides

Laser diodes

Research and Development: STO is a preferred substrate in academic research, particularly in studies of ferroelectric and multiferroic materials.