Titanium Selenide Sputtering Targets | |
Product No | NRE-43586 |
CAS No. | 12067-45-7 |
Formula | TiSe2 |
Molecular Weight | 205.787 |
Purity | >99.9% |
Density | NA |
Thickness | 3 mm ± 0.5mm (can be customized) |
Diameter | 50 mm ± 1mm (can be customized) |
Shape | Round |
Resistivity | NA |
Thermal Conductivity | NA |
Titanium Selenide Sputtering Targets
Introduction:
Titanium selenide sputtering targets is a transition metal dichalcogenide known for its unique electronic and optical properties. As a compound, it exhibits promising characteristics for various applications, particularly in the fields of electronics, optoelectronics, and materials science. Sputtering targets made from titanium selenide are used in physical vapor deposition (PVD) processes to create thin films with specific properties on substrates.
Applications
Electronic Devices: TiSe₂ is investigated for use in field-effect transistors (FETs) and other semiconductor devices due to its favorable bandgap and carrier mobility.
Photovoltaics: Its optoelectronic properties make it a candidate for applications in solar cells, where it can enhance light absorption and conversion efficiency.
Sensors: The compound’s sensitivity to environmental changes makes it suitable for use in gas sensors and chemical detectors.
Catalysis: TiSe₂ can act as a catalyst in various chemical reactions, including those relevant to energy conversion and storage.
Quantum Materials: Research into its topological properties has potential implications for quantum computing and spintronics.
Advantages
High Purity: Sputtering targets can be produced with high purity, ensuring better film quality and performance.
Controlled Composition: The sputtering process allows for precise control over the stoichiometry of the deposited films, crucial for tailoring material properties.
Versatility: TiSe₂ films can be deposited on various substrates, making them adaptable for different applications.