Our Products

Zinc Telluride Sputtering Targets

Zinc Telluride Sputtering Targets

Zinc Telluride Sputtering Targets
Product No NRE-43296
CAS No. 1315-11-3
Formula ZnTe
Molecular Weight 192.99
Purity >99.9%
Density 6.34 g/mL at 25 °C (lit.)
Thickness 3 mm ± 0.5mm (can be customized)
Diameter 50 mm ± 1mm (can be customized)
Shape Round
Resistivity NA
Thermal Conductivity NA

Zinc Telluride Sputtering Targets

Introduction:

Zinc telluride sputtering targets is a II-VI compound semiconductor known for its direct bandgap and favorable optical and electronic properties. It has applications in various fields, particularly in optoelectronics and photonics. ZnTe is typically used in thin film deposition processes, especially in sputtering, where its unique properties can be leveraged to create high-quality films for advanced applications.

Applications

Optoelectronic Devices:

Light-Emitting Diodes (LEDs): ZnTe is used in the fabrication of LEDs, especially for green and blue light emissions, due to its direct bandgap properties.

Laser Diodes: ZnTe is employed in laser diodes, contributing to the development of efficient optoelectronic devices.

Photovoltaic Cells:

ZnTe is explored as an absorber material in thin-film solar cells, where its semiconductor properties can enhance light absorption and energy conversion efficiency.

Infrared Detectors:

The material is utilized in infrared detectors, leveraging its properties for thermal imaging and sensing applications.

Thin Film Transistors (TFTs):

ZnTe thin films can be used in the fabrication of thin film transistors, contributing to advancements in display technologies and electronic devices.

Buffer Layers:

ZnTe can serve as a buffer layer in heterostructures, improving the quality of films deposited on various substrates.

Gas Sensors:

ZnTe materials can be used in gas sensing applications due to their sensitivity to certain gases.

 

error: